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| HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 600 600 20 30 38 60 44 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns ISOPLUS 247TM E153432 G = Gate S = Source * Patent pending D = Drain Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<30pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 130 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V. ID = 250mA VDS = VGS. ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC & DC motor control Advantages * * * * Easy assembly Space savings High power density Low noise to ground IXYS reserves the right to change limits, test conditions, and dimensions. 98728 (06/09/00) (c) 2000 IXYS All rights reserved 1-2 IXFR 44N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 30 45 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 2.0 W (External), Notes 2, 3 55 110 45 330 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT Notes 2, 3 60 65 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.3 250 A A V ns mC A IF = 50A,-di/dt = 100 A/ms, VR = 100 V 1.4 8 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % 3. IT = 22A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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